Band gap narrowing and the band structure of tin-doped indium oxide films
- 6 September 1989
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 176 (1) , 33-44
- https://doi.org/10.1016/0040-6090(89)90361-1
Abstract
No abstract availableKeywords
This publication has 28 references indexed in Scilit:
- Transparent conductors—A status reviewThin Solid Films, 1983
- Preparation and physical properties of transparent conducting oxide filmsPhysica Status Solidi (a), 1982
- Band-gap narrowing in heavily doped many-valley semiconductorsPhysical Review B, 1981
- Optical absorption in heavily doped siliconPhysical Review B, 1981
- Band tailing in heavily doped semiconductors. Scattering and impurity-concentration-fluctuation effectsPhysical Review B, 1981
- Electrical properties of post-oxidized In2O3:Sn filmsThin Solid Films, 1981
- Electrical properties of vacuum-deposited indium oxide and indium tin oxide filmsThin Solid Films, 1980
- Energy gap in Si and Ge: Impurity dependenceJournal of Applied Physics, 1980
- Optical properties of r.f. reactive sputtered tin-doped In2O3 filmsThin Solid Films, 1979
- Heavily doped semiconductors and devicesAdvances in Physics, 1978