High-power, low-threshold BH lasers operating at 1.52 μm grown entirely by MOVPE

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Abstract
BH laser devices with efficient optical and current confinement have been grown using a new all-MOVPE growth technique. The devices produced operated with CW threshold currents as low as 14 mA and output powers of up to 28 mW at 20°C. In initial experiments, over 70% of the working devices tested had threshold currents of less than 30 mA, substantiating the view that MOVPE is a highly promising technique for the large-scale production of complex optoelectronic devices.