Redistribution of the p‐type dopants Zn, Mg, and Cd ion implanted in was examined for two capless annealing techniques: rapid thermal annealing, and radio‐frequency annealing in an environment containing arsine. It was found that apparent activation efficiency was controlled by the degree of evaporation of the dopant in either annealing technique. Although considerable redistribution occurred at the peak of the dopant profiles as a result of evaporation, the extent of in‐diffusion of the dopants was minimized by both capless annealing techniques. In comparison to the in‐diffusion reported in the literature for annealing of silicon nitride‐encapsulated Zn‐implanted , the in‐diffusion in the capless annealings of this work is negligible. This difference is explained on the basis of excess chemical potential of the dopant at the interface between the encapsulant and .