Contact phenomena in nanowire arrays

The capacitance–voltage characteristic $C\left(V\right)$ of an array of semiconductor nanowires perpendicular to a bulk metallic electrode is considered theoretically. For sufficiently high doping ${\nu }_0$ of nanowires, $C\left(V\right)$ is shown to differ dramatically from that of a bulk sample having a strong maximum in the depletion branch. The position of the maximum is proportional to ${\nu }_0$ and can be used for its determination.