High efficiency edge-illuminated uni-travelling-carrier-structurerefracting-facet photodiode
- 16 September 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (19) , 1664-1665
- https://doi.org/10.1049/el:19991148
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Quantum Efficiency of InP/InGaAs Uni-Traveling-Carrier Photodiodes at 1.55–1.7 µm Measured Using Supercontinuum Generation in Optical FiberJapanese Journal of Applied Physics, 1999
- InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidth of over 150 GHzIEEE Photonics Technology Letters, 1998
- 40 Gbit/s high sensitivity optical receiver withuni-travelling-carrier photodiode acting as decision IC driverElectronics Letters, 1998
- Edge-illuminated refracting-facet photodiode withhigh responsivity and low-operation voltageElectronics Letters, 1996