Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
- 14 April 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (15) , 1992-1994
- https://doi.org/10.1063/1.118777
Abstract
We report a very low dark current (∼57 pA at 10 V reverse bias) metal–semiconductor–metal photodetectors fabricated on GaN epitaxial layers grown by low-pressure metalorganic chemical vapor deposition. The photodetectors exhibit the typical sharp band-edge cutoff, with good responsivity. There is indication of a photoconductive gain mechanism. We also performed a Medici simulation to establish an effective area for current density calculations.Keywords
This publication has 14 references indexed in Scilit:
- Schottky contact and the thermal stability of Ni on n-type GaNJournal of Applied Physics, 1996
- Semiconductor ultraviolet detectorsJournal of Applied Physics, 1996
- Very low resistance multilayer Ohmic contact to n-GaNApplied Physics Letters, 1996
- High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaNApplied Physics Letters, 1996
- Kinetics of photoconductivity in n-type GaN photodetectorApplied Physics Letters, 1995
- Photoconductive ultraviolet sensor using Mg-doped GaN on Si(111)Applied Physics Letters, 1995
- Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologiesJournal of Applied Physics, 1994
- Metal contacts to gallium nitrideApplied Physics Letters, 1993
- GaN, AlN, and InN: A reviewJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayersApplied Physics Letters, 1992