Resonant-cavity InGaN quantum-well blue light-emitting diodes
- 18 September 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 77 (12) , 1744-1746
- https://doi.org/10.1063/1.1310625
Abstract
We describe progress in blue resonant-cavity light-emitting diodes, based on InGaN/GaN quantum-well heterostructures. We have fabricated vertical-microcavity devices in which either one or both mirrors forming the cavity are patterned, high-reflectivity dielectrics Bragg reflectors. The results suggest that a blue vertical-cavity diode laser may be feasible by this approach.Keywords
This publication has 8 references indexed in Scilit:
- A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laserApplied Physics Letters, 2000
- Improved characteristics of InGaN multiple-quantum-well light-emitting diode by GaN/AlGaN distributed Bragg reflector grown on sapphireApplied Physics Letters, 2000
- Dielectric Bragg Mirrors for InGaN Surface-Emitting LasersPhysica Status Solidi (a), 1999
- Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-offApplied Physics Letters, 1999
- Indium tin oxide contacts to gallium nitride optoelectronic devicesApplied Physics Letters, 1999
- A vertical injection blue light emitting diode in substrate separated InGaN heterostructuresApplied Physics Letters, 1999
- Damage-free separation of GaN thin films from sapphire substratesApplied Physics Letters, 1998
- Optical Process for Liftoff of Group III-Nitride FilmsPhysica Status Solidi (a), 1997