Mechanism of kink effect related to negative photoconductivity in AlGaAs/GaAs HEMTs

25 May 1989

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 25 (11) , 738-739
https://doi.org/10.1049/el:19890499

Abstract

The observation and proposed mechanism for negative photoconductivity leading to the kink effect in the output DC characteristics of AlGaAs/GaAs HEMTs is reported. Negative photoconductivity is the result of trapping electrons at the surface, and the kink is attributed to the tunnelling of these trapped electrons back into the n-AlGaAs layer, at a constant gate-to-drain bias.

Keywords

N+ LASER
III-V SEMICONDUCTORS
OUTPUT DC CHARACTERISTICS
KINK EFFECT
NEGATIVE PHOTOCONDUCTIVITY
HEMTS
ALGAAS-GAAS
DEPLETION-MODE DEVICES
CONSTANT GATE-TO-DRAIN BIAS
2 DEG PEAK FIELD
DRAIN CURRENT INCREASE
ELECTRON TRAPPING
TUNNELLING

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