Periodic flux interruption and sustained two-dimensional growth for molecular beam epitaxy
- 23 November 1989
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 25 (24) , 1659-1660
- https://doi.org/10.1049/el:19891112
Abstract
Periodic interruption of Ga flux during MBE growth of GaAs has been used to achieve sustained two-dimensional layer-by-layer growth. RHEED intensity oscillation for extended growth shows no degradation in the oscillation amplitude, indicating an atomically smooth growth front throughout the growth.Keywords
This publication has 0 references indexed in Scilit: