Radiation response of 1300-nm optoelectronic components in a natural space environment

25 February 1993

proceedings article
Published by SPIE-Intl Soc Optical Eng

p. 224-231
https://doi.org/10.1117/12.141165

Abstract

We report energy-dependent proton and Co-60 test results and analysis assessing performance of In_0.53Ga_0.47As photodetectors and In_0.71Ga_0.29As_0.61P_0.39 laser diodes for satellite applications. Calculations of the nonionizing energy loss (NIEL) for protons in InGaAs allow damage assessment using a general technique for evaluating displacement damage in orbit. Device performance is predicted for several shield thicknesses and orbital conditions. We also discuss effects in optoelectronic devices due to total dose and ionization transients.

Keywords

PHOTODETECTORS
ORBITAL DYNAMICS
OPTOELECTRONIC DEVICES
SEMICONDUCTOR LASERS
SATELLITES
IONIZATION
RADIATION

This publication has 0 references indexed in Scilit: