Strongly localized excitons in gallium nitride

29 April 1996

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 68 (18) , 2556-2558
https://doi.org/10.1063/1.116182

Abstract

We report on strong excitonic luminescence in wurtzite GaN at 3.309 and 3.365 eV (T=6 K). These lines lie well below the band gap and are found commonly in layers grown by different techniques and on different substrates. From detailed photoluminescence investigations we find small thermal activation energies and a very weak electron–phonon coupling. The photoluminescence behavior under hydrostatic pressure is indicative of strongly localized defects. These findings are similar to observations of excitons localized at extended defects such as dislocations in II–VI compounds.

Keywords

PRESSURE EFFECTS
LOCALIZED STATES
DEFECT STATES
GALLIUM NITRIDES
PHOTOLUMINESCENCE
EXCITONS
CRYSTAL DEFECTS
ELECTRON−PHONON COUPLING
ACTIVATION ENERGY
BOUND STATE
PRESSURE DEPENDENCE

This publication has 0 references indexed in Scilit: