Electron mobility and infra-red absorption in reduced tin oxide crystals
- 1 November 1969
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 2 (11) , 1503-1505
- https://doi.org/10.1088/0022-3727/2/11/303
Abstract
We have prepared tin oxide crystals with greater purity than our previous samples, and have introduced electron densities between 1017 and 1018 cm−3, by reduction in vacuum. The electron Hall mobility has been measured and is between 200 and 250 cm2 v−1 s−1 at room temperature. The highest value we have observed at 77°K is 700 cm2 v−1 s−1. The infra-red absorption indicates that the scattering at 300°K is due to optical modes, and that the electron effective mass is 017m0.Keywords
This publication has 9 references indexed in Scilit:
- The Static Dielectric Constant of SnO2Journal of Applied Physics, 1968
- Polar optical-mode scattering of electrons in SnO2Solid State Communications, 1968
- Electrical properties of single crystals of antimony-doped stannic oxideBritish Journal of Applied Physics, 1966
- Infrared absorption in single crystal stannic oxideJournal of Physics and Chemistry of Solids, 1965
- Vapor Reaction Growth of SnO2 Single Crystals and Their PropertiesJapanese Journal of Applied Physics, 1965
- The optical properties of tin oxide crystalsBritish Journal of Applied Physics, 1965
- Free-Carrier Infrared Absorption in III-V Semiconductors III. GaAs, InP, GaP and GaSbJournal of the Physics Society Japan, 1964
- Free Carrier Absorption Due to Polar Modes in the III-V Compound SemiconductorsPhysical Review B, 1960
- Infra-red Absorption in SemiconductorsReports on Progress in Physics, 1956