Substrate temperature-induced changeover from homogeneous to step nucleated growth modes for the initial thermal oxidation of Si(001) by O2
- 1 January 1990
- Vol. 41 (4-6) , 1124-1127
- https://doi.org/10.1016/0042-207x(90)93887-o
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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