Liquid Crystal Alignment Method for Long Lifetime Tilted-Perpendicular Light Valves
- 1 May 1991
- journal article
- research article
- Published by Taylor & Francis in Molecular Crystals and Liquid Crystals
- Vol. 199 (1) , 37-46
- https://doi.org/10.1080/00268949108030915
Abstract
A new technique for tilted-perpendicular alignment (TPA) of liquid crystals on surfaces greatly improved the photostability of the photoactivated liquid crystal light valves (LCLVs) with negative dielectric anisotropy liquid crystals. The operation of surface-perpendicular aligned LCLVs provided a very dark off-state, high contrast images, and high light throughput efficiency. Alkoxy groups bonded on angle-deposited SiO2 gave controlled TPA, in which the tilt angle of LC on the treated surfaces was primarily dependent on the thickness of the shallow-angle deposited SiO2 layer. We have demonstrated improved photostability to high intensity light exposures using this TPA method in hermetically sealed cells. Projection LCLVs with very high contrast and with greater than 10,000 hours of operational stability at 2000 lumens, were obtained using this new TPA method and more stable liquid crystal mixtures.Keywords
This publication has 7 references indexed in Scilit:
- Near Ultraviolet Photostability of Liquid Crystal MixturesMolecular Crystals and Liquid Crystals, 1986
- Improved Materials for DC Dynamic Scattering at Elevated TemperaturesMolecular Crystals and Liquid Crystals, 1985
- Effects of Molecular Length on Nematic MixturesMolecular Crystals and Liquid Crystals, 1981
- A New Method for Inducing Homeotropic and Tilted Alignments of Nematic Liquid Crystals on Silica SurfacesPublished by Springer Nature ,1978
- Photochemical and Thermal Stability Studies on a Liquid Crystal Mixture of CyanobiphenylsPublished by Springer Nature ,1978
- Determination of the tilt angles at surfaces of substrates in liquid crystal cellsPhysics Letters A, 1976
- Photoactivated birefringent liquid-crystal light valve for color symbology displayIEEE Transactions on Electron Devices, 1975