Shallow boron junctions implanted in silicon through a surface oxide

• 1 August 1984
• journal article
• Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
• Vol. 5  (8) , 299-301
• https://doi.org/10.1109/edl.1984.25924

Abstract

Keywords

• BORON
• SILICON
• IMPLANTS
• ANNEALING
• AMORPHOUS MATERIALS
• TAIL
• CMOS TECHNOLOGY
• SUBSTRATES
• ION BEAMS
• SHADOW MAPPING