Binding energies of excitons in semiconductor quantum wells: Quantum subband interference effect
- 15 June 1989
- journal article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 39 (17) , 12944-12947
- https://doi.org/10.1103/physrevb.39.12944
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Interband optical transitions in GaAs-As and InAs-GaSb superlatticesPhysical Review B, 1985
- Exciton binding energy in GaAs quantum wells deduced from magneto-optical absorption measurementSolid State Communications, 1984
- Magneto-optical determination of exciton binding energy in GaAs-quantum wellsPhysical Review B, 1984
- Energy levels of Wannier excitons in quantum-well structuresPhysical Review B, 1984
- Optical selection rules in superlattices in the envelope-function approximationPhysical Review B, 1984
- Modification of optical properties of GaAs-Ga1−xAlxAs superlattices due to band mixingApplied Physics Letters, 1983
- Binding energies of wannier excitons in GaAs-Ga1−xAlxAs quantum well structuresSolid State Communications, 1983
- Exciton binding energy in quantum wellsPhysical Review B, 1982
- Observation of the excited level of excitons in GaAs quantum wellsPhysical Review B, 1981
- The exciton in recombination in AlxGa1−xAs-GaAs quantum-well heterostructuresSolid State Communications, 1980