Sputtering of Single-Crystal Copper and Aluminum with 20–600 eV Argon Ions
- 1 May 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (5) , 1683-1687
- https://doi.org/10.1063/1.1703109
Abstract
Absolute measurement of the sputtering yield of (100) and (111) copper and of (111) aluminum single‐crystal targets bombarded with 20–600 eV argon ions was performed employing a sensitive quartz micro‐balance in an ultrahigh‐vacuum system. The threshold energies for copper and aluminum targets were less than 20 eV. The sputtering yield values in the threshold region were dependent upon the detailed nature of the target surfaces. The threshold region orientation dependence of the sputtering yield for copper was different from that in the higher energy regions.This publication has 16 references indexed in Scilit:
- Sputtering Yields of Single Crystals Bombarded by 1- to 10-keV Ar+ IonsJournal of Applied Physics, 1963
- Full-Plane Threshold Energies for Cathode Sputtering of Metals with Ar+ IonsJournal of Applied Physics, 1963
- Sputtering Experiments with 1- to 5-keV Ar+ IonsJournal of Applied Physics, 1963
- Sputtering Yields at Very Low Bombarding Ion EnergiesJournal of Applied Physics, 1962
- Threshold Energies in Mechanical Collision Theories of Cathode SputteringJournal of Applied Physics, 1962
- Sputtering ThresholdsPhysical Review B, 1961
- Sputtering Yields of Metals for Ar+ and Ne+ Ions with Energies from 50 to 600 evJournal of Applied Physics, 1961
- The cathodic sputtering of silverJournal of Physics and Chemistry of Solids, 1959
- Low-Energy Sputtering Yields in HgPhysical Review B, 1958
- Low-Pressure Solubility and Diffusion of Hydrogen in ZirconiumJournal of the Electrochemical Society, 1957