Photoconductivity of CdSe Films Prepared by a Vapor Evaporating-Reactive Sputtering Method

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Abstract
CdSe films are prepared by a vapor evaporating-reactive sputtering method. A cadmium cathode is sputtered in the Se vapor carried by argon or hydrogen gas to the glow discharge region. The photoconductive sensitivity of the deposited film increases by annealing in argon gas. The ratio of the light current to the dark currentIl/Idis as high as 107. The surface adsorption effect of oxygen on the large photoconductivity of the sputtered film is discussed by the Elovich theory. The dark resistance of the sensitized CdSe film is determined by the surface oxygen which is chemisorbed as a acceptor type adsorbate, and the photosensitivityIl/Idis strongly dependent on the surface chemisorbed oxygen. The overshoot of the light current is due to the photo-adsorption process, which is also discussed by the solution of Elovich equation.

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