Comparison of models for Raman spectra of Si nanocrystals
- 15 April 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 55 (15) , 9263-9266
- https://doi.org/10.1103/physrevb.55.9263
Abstract
Within the framework of a partial-density approach, the confinement of vibrations in spherical Si nanocrystals is studied and the Raman frequency shifts of Si spheres with different sizes are derived based on the Raman spectra obtained by a bond-polarizability model. The results obtained by the bond-polarizability model are compared with those by the phenomenological model developed by Richter et al. [Solid State Commun. 39, 625 (1981)].Keywords
This publication has 20 references indexed in Scilit:
- The one phonon Raman spectrum in microcrystalline siliconPublished by Elsevier ,2002
- Blue photoluminescence and local structure of Si nanostructures embedded in SiO2 matricesApplied Physics Letters, 1995
- Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous SiJapanese Journal of Applied Physics, 1993
- A detailed Raman study of porous siliconThin Solid Films, 1992
- Raman scattering from H or O terminated porous SiApplied Physics Letters, 1992
- Raman analysis of light-emitting porous siliconApplied Physics Letters, 1992
- Porous silicon formation: A quantum wire effectApplied Physics Letters, 1991
- Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafersApplied Physics Letters, 1990
- Quantum size effects on the optical band gap of microcrystalline Si:HPhysical Review B, 1988
- The effects of microcrystal size and shape on the one phonon Raman spectra of crystalline semiconductorsSolid State Communications, 1986