Interlayer Self-Diffusion on Stepped Pt(111)
- 6 July 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 81 (1) , 168-171
- https://doi.org/10.1103/physrevlett.81.168
Abstract
Challenging our understanding of epitaxy on clean and O-precovered Pt(111), the ab initio Schwoebel barrier calculated for downward self-diffusion across -type steps on Pt(111) is only . Geometric arguments explain why , the Schwoebel barrier at -type steps, is more than an order of magnitude larger than .
Keywords
This publication has 19 references indexed in Scilit:
- Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis setComputational Materials Science, 1996
- Abinitiocalculations of energies and self-diffusion on flat and stepped surfaces of Al and their implications on crystal growthPhysical Review B, 1996
- Island Shape-Induced Transition from 2D to 3D Growth for Pt/Pt(111)Physical Review Letters, 1995
- Diffusion mechanisms relevant to metal crystal growth: Pt/Pt(111)Surface Science, 1994
- Origin of oxygen induced layer-by-layer growth in homoepitaxy on Pt(111)Physical Review Letters, 1994
- Ab initiomolecular dynamics for liquid metalsPhysical Review B, 1993
- Pseudopotential methods in condensed matter applicationsComputer Physics Reports, 1989
- Ground State of the Electron Gas by a Stochastic MethodPhysical Review Letters, 1980
- Step Motion on Crystal SurfacesJournal of Applied Physics, 1966
- Atomic View of Surface Self-Diffusion: Tungsten on TungstenThe Journal of Chemical Physics, 1966