Formation of an AIN continuous layer by Nitrogen ion implantation in aluminium alloys
- 1 January 1985
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 88 (1-2) , 145-151
- https://doi.org/10.1080/00337578608207506
Abstract
Nitrogen ion implantations at doses from 1017 ions cm−2 up to 6 × 1017 ions cm−2 in pure Al and an Au4G industrial alloy are studied by electron microscopy investigations. In these two materials, we observe the formation of AIN precipitates with an orientation relationship between the two lattices. The highest dose leads to the formation of a continuous layer of AIN with a very good crystallographic quality, but there are blisters due to gas bubbles. It seems that the dose of 3 × 1017 ions cm−2 is optimum to have a good AIN continuous layer and thus to improve the surface qualities of the materials.Keywords
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