Effects of uniaxial stress on the photoluminescence spectrum of Ge doped with Zn
- 31 October 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 60 (4) , 327-330
- https://doi.org/10.1016/0038-1098(86)90743-x
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- Photoluminescence and infrared absorption studies of Ge doped with MgSolid State Communications, 1985
- Piezospectroscopic study of Be double acceptors in GePhysical Review B, 1985
- Photoluminescence of Bound Exciton and Bound-Double-Exciton Complex in Zinc Doped GermaniumJournal of the Physics Society Japan, 1985
- Observation of a large ground-state splitting in the infrared absorption spectrum of Zn in GePhysical Review B, 1985
- Disappearance of Be-related photoluminescence in Be-doped Ge under large uniaxial stressesSolid State Communications, 1985
- Site distortion of the beryllium acceptor in germaniumPhysical Review B, 1984
- Radiative recombination of excitons bound to beryllium double acceptors in germaniumJournal of Physics C: Solid State Physics, 1984
- Bound-double-exciton complexes in zinc-doped germaniumPhysical Review B, 1984
- Excitation spectra of group-II acceptors in Ge: Ge(), Ge(), and Ge()Physical Review B, 1983
- Double acceptor bound exciton in GeSolid State Communications, 1983