Acoustic bulk wave composite resonators
- 1 February 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 38 (3) , 125-127
- https://doi.org/10.1063/1.92298
Abstract
This letter reports on a new and unique form of acoustic bulk wave resonator composed of a thin film of ZnO sputtered onto a thin Si membrane supporting structure. The piezoelectric ZnO is used to excite a longitudinal bulk wave which reflects from the free surface of the film and membrane. The structure thus forms an acoustical cavity which exhibits parallel and series electrical resonance responses at the ZnO film electrodes for both even and odd order modes. Fundamental resonant frequencies near 500 MHz have been achieved with parallel resonant Q’s over 9000. The temperature coefficient of resonant frequency was found to be −31 ppm for a Si to ZnO thickness ratio of six.Keywords
This publication has 2 references indexed in Scilit:
- Fabrication of novel three-dimensional microstructures by the anisotropic etching ofIEEE Transactions on Electron Devices, 1978
- Acoustic-bulk-wave resonators and filters operating in the fundamental mode at frequencies greater than 100 MHzElectronics Letters, 1977