Surface Smoothness and Lattice Constant of Gallium Arsenide Grown by Liquid Phase Epitaxy

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Abstract
Layers of GaAs are grown on the (100) plane of GaAs substrates under various growth conditions of liquid phase epitaxy. Two kinds of surface are observed. The one has mosaic surface structure and is cloudy, the other has wavy surface structure and is mirror-like. The lattice constants of epitaxial layer and the substrate (undeposited side) have been determined precisely by the Bond method. When the lattice constant of epitaxial layer differs from that of substrate, the wafer is bent in the side of the smaller lattice constant. An epitaxial layer grown on the unbent substrate or the convex side of bent substrate has mosaic surface structure. On the other hand a wavy surface layer grows on the concave side of bent substrate. The bending is caused by clamping and heating the wafer during the growth experiment.

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