Growth and Characterization of Strained-Layer Quantum Wells with Wide Gap ZnCdSSe Alloy System
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (S1)
- https://doi.org/10.7567/jjaps.32s1.169
Abstract
A guideline for designing laser structures with strained-layer quantum wells (QWs) of ZnCdSSe alloy system is discussed. Growth control and optical properties of ZnCdSe/ZnSSe QWs coherently grown on GaAs substrates strongly suggest their promising potential for blue-green region optoelectronic applications. For ultraviolet laser structures, ZnCdSSe/ZnSSe or ZnCdSSe/ZnCdS QWs coherently grown on GaP are proposed.Keywords
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