Piezoresistivity of Bismuth
- 16 September 1966
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 149 (2) , 485-489
- https://doi.org/10.1103/PhysRev.149.485
Abstract
The temperature dependences of the longitudinal and transverse piezoresistivities have been measured over the range 70-300°K for five pure bismuth crystals of different crystallographic orientation. An oscillatory stress collinear with a direct current in the sample was employed. The data were analyzed by a least-squares technique, and the temperature dependences of the piezoresistivity coefficients , , , , (), and () were obtained. These results are compared with published data on the change in resistivity under hydrostatic pressure to obtain estimates of all eight piezoresistivity coefficients at room temperature and seven of the coefficients at liquid-nitrogen temperature. The relative magnitudes of the coefficients are compared with a theory based on the electron-transfer model.
Keywords
This publication has 8 references indexed in Scilit:
- Apparatus for Measurement of Piezoresistivity of Low Resistivity MaterialsReview of Scientific Instruments, 1966
- Piezo-Galvanomagnetic Effects in BismuthPhysical Review B, 1964
- Transport Properties and Band Structure in Bismuth, Antimony and their AlloysIBM Journal of Research and Development, 1964
- Electrons and Holes in BismuthPhysical Review B, 1962
- Note on Measurement of Figure of Merit of Thermoelectric MaterialsReview of Scientific Instruments, 1960
- Piezoresistance in BismuthPhysical Review B, 1956
- The Tension Coefficients of Resistance of the Hexagonal Crystals Zinc and CadmiumPhysical Review B, 1936
- The Effect of Tension on the Electrical Resistance of Single Bismuth CrystalsPhysical Review B, 1932