Interface-sensitive conversion-electron Mössbauer study of ion-beam mixing at the Fe-Al interface
- 1 May 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (9) , 5703-5711
- https://doi.org/10.1103/physrevb.31.5703
Abstract
Ion-beam-induced atomic mixing and the effect of thermally activated transformations at the Fe-Al interface have been studied for the first time with use of the technique of conversion-electron Mössbauer spectroscopy (CEMS). A concept of interface-sensitive CEMS which exploits the deposition of a thin (∼50-Å) layer of iron enriched to 95.45.% of at the interface between the aluminium substrate and an overlayer of natural iron (containing only 2.2% of ) has been introduced and used in the present investigations. CEMS spectra of the as-deposited sample, fitted in terms of the distribution of hyperfine fields at nuclei show that not all the atoms in the interface region see the environment as in α-Fe but have one or more aluminium neighbors. The interface layers are transformed on bombardment with 100-keV ions at a dose of ∼ ions/ into a random metastable alloy having an average composition of . atoms in this alloy experience a variety of environments ranging from dimers in Al matrix at one end to that typically characteristic of α-Fe at the other. This alloy does not show any phase precipitation on vacuum annealing at 300 and 400 °C for 20 min. However, on annealing at 500 °C, a sudden precipitation of α-Fe and Al phases is seen. On further annealing of the sample at 600 °C, Al phase is seen to decompose to give iron clusters. These results of CEMS measurements have been confirmed by small-angle x-ray-diffraction studies. A non-interface-sensitive CEMS study has also been performed to investigate the dose dependence of ion-beam mixing.
Keywords
This publication has 23 references indexed in Scilit:
- Reduction in the thermal reaction barrier for the formation of MnBi thin films by ion-beam mixing techniqueNuclear Instruments and Methods in Physics Research, 1983
- Structural difference rule for amorphous alloy formation by ion mixingApplied Physics Letters, 1983
- Ion-beam mixing of metal-semiconductor eutectic systemsNuclear Instruments and Methods, 1981
- Microalloying by ion-beam mixingNuclear Instruments and Methods, 1981
- Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structuresNuclear Instruments and Methods, 1981
- Ion-beam-induced metastable Pt2Si3 phase. II. Kinetics and morphologyJournal of Applied Physics, 1980
- Ion-beam induced metastable Pt2Si3 phase. I. Formation, structure, and propertiesJournal of Applied Physics, 1980
- Ion-beam-induced formation of the PdSi silicideApplied Physics Letters, 1979
- Formation of Si-enriched metastable compounds in the Pt-Si system using ion bombardment and post annealingPhysics Letters A, 1979
- Ion-beam-induced silicide formationApplied Physics Letters, 1979