High-reliability flip-chip GaInAs/InP pin photodiode
- 30 August 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (18) , 1484-1486
- https://doi.org/10.1049/el:19900953
Abstract
Lensed, small-junction, flip-chip GaInAs/InP pin photodiodes were fabricated by introducing planar junction and reliable metallisation structures. Low dark current (<100pA), high quantum efficiency (80%) with large fibre alignment tolerance (42 μm) and also large bandwidth (21 GHz) characteristics were achieved. Aging test carried out at 180 °C for 3000 h confirmed their high reliability.Keywords
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