A field effect transistor based on Langmuir-Blodgett films of an Ni(dmit)2 charge transfer complex
- 1 May 1994
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 244 (1-2) , 932-935
- https://doi.org/10.1016/0040-6090(94)90603-3
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Electrical properties of Langmuir-Blodgett films of a Ni(dmit)2 charge-transfer complexThin Solid Films, 1992
- Highly-conducting Langmuir-Blodgett films based on Ni(dmit)2 anionsJournal of the Chemical Society, Chemical Communications, 1991
- An all‐organic "soft" thin film transistor with very high carrier mobilityAdvanced Materials, 1990
- Structural properties of Langmuir-Blodgett films of a long-chain tetrathiafulvalene derivativeSynthetic Metals, 1990
- Molecular field-effect transistors using conducting polymer Langmuir–Blodgett filmsApplied Physics Letters, 1990
- Metallic Temperature Dependence in the Conductivity of Langmuir–Blodgett Films of Tridecylmethylammonium–Au(dmit)2Chemistry Letters, 1989
- A highly conducting tetrathiafulvalene Langmuir-Blodgett filmThin Solid Films, 1988
- Conductive Langmuir–Blodgett Films of Dialkyldimethylammonium–Ni(dmit)2 ComplexesChemistry Letters, 1988
- CONDUCTING LANGMUIR–BLODGETT FILMS OF 1:2 CHARGE TRANSFER COMPLEX, N-DOCOSYLPYRIDINIUM-(TCNQ)2Chemistry Letters, 1986
- Novel Conducting LB FilmsMolecular Crystals and Liquid Crystals, 1985