Kinetic segregation of AlAs-GaAs during 〈110〉 MBE
- 1 March 1985
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 71 (2) , 326-332
- https://doi.org/10.1016/0022-0248(85)90087-9
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Far from equilibrium vapour phase growth of lattice matched III–V compound semiconductor interfaces: Some basic concepts and monte-carlo computer simulationsSurface Science, 1983
- Alloy Clustering inCompound Semiconductors Grown by Molecular Beam EpitaxyPhysical Review Letters, 1982
- Metal–semiconductor surface and interface states on (110) GaAsJournal of Vacuum Science and Technology, 1978
- Statistical Thermodynamics of Clean SurfacesPublished by Elsevier ,1975
- Phase equilibria in ternary III–V systemsProgress in Solid State Chemistry, 1972
- Spectroscopic Analysis of Cohesive Energies and Heats of Formation of Tetrahedrally Coordinated SemiconductorsPhysical Review B, 1970
- Phase equilibria in the GaAs and the GaP systemsJournal of Physics and Chemistry of Solids, 1965