Anodic oxide composition and Hg depletion at the oxide–semiconductor interface of Hg1−xCdxTe

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Abstract
The composition and chemical states of the oxide, interface, and bulk semiconductor regions of Hg0.8Cd0.2Te with anodic oxide films of 360, 1200, 1600, and 1600 Å chemically etched to 1200 Å were analyzed with x-ray photoelectron spectroscopy combined with ion sputterng. The near interface semiconductor exhibits 30%–40% less Hg than the bulk semiconductor. Detailed depth profiles were measured for this Hg depletion region. The maximum depletion is independent of the oxide thickness, but its spatial extent is a function of oxide thickness for thin films. For thick oxide films (≳1000 Å) the depletion width is constant at 150–200 Å. No significant change in the Cd concentration is seen. Line shape analysis of the Cd M45N45N45 Auger transition in the anodic oxide, CdO, Cd(OH)2, and CdTeO3 suggests that CdTeO3 rather than TeO2, CdO, or Cd(OH)2, is the major constituent of the anodic oxide. The oxide composition is interpreted to be 44% CdTeO3, 29% CdTe2O5, 17% HgTeO3, and 10% HgTe2O5.

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