Beam-induced lattice disorder in channeling experiments on Si and Ge
- 1 November 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (9) , 425-427
- https://doi.org/10.1063/1.1654441
Abstract
The disorder produced by 0.3‐MeV D+ random bombardment in Si and Ge crystal targets has been investigated with 1.5‐MeV D+ channeling measurements. An increase of about 30–50% in the 〈111〉‐ and 〈110〉‐aligned yields of Ge samples has been found after a bombardment with a dose of 200–300 μC/cm2. No significant increase was observed in bombarded Si samples. Detailed angular scans suggest a ``spread‐out'' distribution of defects imbedded in the lattice structure.Keywords
This publication has 11 references indexed in Scilit:
- Channeling in Si Overlaid with Al and Au FilmsPhysical Review B, 1972
- Transmission energy loss of light channeled particles in thin silicon crystalsRadiation Effects, 1972
- Stopping power of energetic helium ions transmitted through thin silicon crystals in channelling and random directionsRadiation Effects, 1972
- Ion-Channeling Studies of Epitaxial LayersApplied Physics Letters, 1972
- Oscillation Frequencies of Protons in Planar Channels of SiliconPhysical Review B, 1971
- Study of atomic displacements in He+irradiated silicon and a silicon-germanium alloy, through rutherford scatteringRadiation Effects, 1971
- Temperature and Energy Dependence of Proton Dechanneling in SiliconPhysical Review B, 1971
- Investigation of the energy and temperature dependence of the string effectCanadian Journal of Physics, 1968
- Channeling of MeV Projectiles in Tungsten and SiliconPhysical Review B, 1968
- Channeling Effects in the Energy Loss of 3-11-MeV Protons in Silicon and Germanium Single CrystalsPhysical Review B, 1967