Spin-valve RAM cell
- 1 January 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 31 (6) , 3206-3208
- https://doi.org/10.1109/20.490329
Abstract
This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells, the present cell design exploits the full /spl Delta/R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-microns long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.Keywords
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