Very low pressure chemical vapor deposition process for selective titanium silicide films

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Abstract
We report for the first time the selective deposition of titanium silicide using a very low pressure chemical vapor deposition technique with silane and titanium tetrachloride as the silicon and titanium sources, respectively. A method is described for the blanket and selective deposition of titanium silicide. A thin polycrystalline silicon (polysilicon) layer is deposited prior to the silicide deposition to promote the nucleation of titanium silicide. It is shown that selective deposition is possible by controlling the polysilicon and the titanium silicide deposition times. The resulting titanium silicide films have resistivities in the range of 15–25 μΩ cm.

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