Minority carrier lifetime measurement in gold doped silicon MOS structures
- 1 July 1968
- journal article
- other
- Published by Elsevier in Surface Science
- Vol. 11 (1) , 147-148
- https://doi.org/10.1016/0039-6028(68)90045-9
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Experimental study of semiconductor surface conductivitySurface Science, 1966
- Transient Response of a p-n JunctionJournal of Applied Physics, 1954