Quantitative analysis of arsenic-implanted layers in silicon by synchrotron-radiation-excited x-ray fluorescence
- 1 July 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (1) , 260-263
- https://doi.org/10.1063/1.335721
Abstract
The quantitative analysis of arsenic-implanted silicon using the novel technique of synchrotron radiation x-ray fluorescence (SRXF) is reported. An extension of x-ray fluorescence (XRF) theoretical correction factors to the Gaussian impurity distribution is also presented. In the sample analyzed, the dose of arsenic implant is found to be 2.3×1015 atoms cm−2±0.5×1015 atoms cm−2, in reasonable agreement with the value of 1.0±0.1×1015 atoms cm−2 quoted by the implanters. The method is applicable to the rapid and nondestructive assessment of dose accuracy, uniformity, and reproducibility of a variety of ion-implanted species in various substrates.This publication has 2 references indexed in Scilit:
- Calculation methods for fluorescent x-ray spectrometry. Empirical coefficients versus fundamental parametersAnalytical Chemistry, 1968
- Atomic Fluorescence YieldsReviews of Modern Physics, 1966