Vacancy concentration in the core of the 90° reconstructred partial dislocation in silicon
- 30 November 1989
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 72 (6) , 609-612
- https://doi.org/10.1016/0038-1098(89)91043-0
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- New empirical approach for the structure and energy of covalent systemsPhysical Review B, 1988
- New empirical model for the structural properties of siliconPhysical Review Letters, 1986
- The entropy factor involved in the Hirth and Lothe theory of dislocation velocity in siliconSolid State Communications, 1985
- Microscopic Theory of Atomic Diffusion Mechanisms in SiliconPhysical Review Letters, 1984
- A note on double kink interaction and formation energies siliconSolid State Communications, 1984
- Theory of static structural properties, crystal stability, and phase transformations: Application to Si and GePhysical Review B, 1982
- Microscopic Theory of the Phase Transformation and Lattice Dynamics of SiPhysical Review Letters, 1980
- The kinetics of migration of point defects to dislocationsReports on Progress in Physics, 1970
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966
- Diffusion along Small-Angle Grain Boundaries in SiliconPhysical Review B, 1961