Silicon nitride films deposited with an electron beam created plasma

15 March 1984

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 44 (6) , 598-600
https://doi.org/10.1063/1.94840

Abstract

Silicon nitride films have been deposited using an electron beam created plasma in a silane, ammonia, and nitrogen mixture. The films were deposited at substrate temperatures between 50 and 400 °C. Physical, chemical, and electrical properties of these films are reported.

Keywords

This publication has 2 references indexed in Scilit:

Electron beam assisted chemical vapor deposition of SiO2
Applied Physics Letters, 1983
The energy of thermal electrons in electron beam created helium discharges
Physics Letters A, 1983