Fabrication of wedge-shaped silicon field emitters with nm-scale radii
- 11 March 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (10) , 1042-1043
- https://doi.org/10.1063/1.104417
Abstract
Wedge-shaped field emitters may have some advantages over conical tip emitters as electron sources in vacuum microelectronic devices. A method has been developed to make atomically sharp wedge-shaped silicon through use of dry etching and dry oxidation. Transmission electron microscopy studies show that silicon wedge emitters can be made with wedge radius and angle at 1 nm and 60°, respectively, by repeated oxidation in oxygen at 950 °C.Keywords
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