A Parametric Study of the Etching of Silicon in SF6Microwave Multipolar Plasmas: Interpretation of Etching Mechanisms
- 1 June 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (6R)
- https://doi.org/10.1143/jjap.26.825
Abstract
A parametric study of the etching of silicon has been performed in a Microwave Multipolar Plasma using an Electron Cyclotron Resonance excitation. The evolution of the anisotropy and etch rate is measured as a function of the SF6pressure, ion energy (6pressure whereas the etch rate, independent of ion energy and current density, increases proportionally with the SF6pressure in the domain investigated. These results, corroborated by the mass spectrometry analysis of the reaction products are explained through the diffusion model recently proposed for plasma etching.Keywords
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