The use of beam shaping to achieve large-grain cw laser-recrystallized polysilicon on amorphous substrates
- 15 September 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (6) , 498-500
- https://doi.org/10.1063/1.92773
Abstract
Laser beam shaping has been used to increase the grain size of laser‐recrystallized polycrystallinesilicon on amorphous substrates. Using a slanted liquid‐solid interface, rectangular grains as large as 45×50 μm have been grown in 0.5‐μm‐thick chemical vapor deposited polysilicon on quartz substrates. Improved surface smoothness of recrystallized material has also been achieved using this procedure.Keywords
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