The current understanding of epitaxial CVD silicon layer doping in the light of modeling and theory development (IX).Verification of the Multi-wafer Autodoping Model
- 1 May 1989
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 24 (5) , 531-538
- https://doi.org/10.1002/crat.2170240509
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The current understanding of epitaxial CVD silicon layer doping in the light of modeling and theory development (VII)Crystal Research and Technology, 1989
- Equilibrium dopant incorporation in CVD silicon epitaxyCrystal Research and Technology, 1989
- Adsorbed Layer Model for Autodoping Mechanism in Silicon Epitaxial GrowthJournal of the Electrochemical Society, 1979