Design and evaluation of a planar GaAlAs-GaAs bipolar transistor

3 January 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (1) , 41-42
https://doi.org/10.1049/el:19800032

Abstract

A planar GaAIAs-GaAs bipolar transistor using a new technological processing technique is presented: a p-type diffusion through the emitter layer is used for base contacting, making possible the use of a low Al content emitter, and leading to low values of the base resistance. A transition frequency of 1 GHz and a maximum oscillation frequency of 450 MHz have been measured on large annular geometry devices.

Keywords

LARGE ANNULAR GEOMETRY DEVICES
EQUIVALENT CIRCUITS
LOW BASE RESISTANCE
PLANAR GAALAS-GAAS BIPOLAR TRANSISTOR
PROCESSING TECHNIQUE
LOW AL CONTENT EMITTER
CHARACTERISTICS
HETEROJUNCTION BIPOLAR TRANSISTOR
SEMICONDUCTOR DEVICE MODELS
MAXIMUM OSCILLATION FREQUENCY 450 MHZ
TRANSITION FREQUENCY 1 GHZ
EVALUATION

This publication has 0 references indexed in Scilit: