ELECTRONIC STRUCTURE OF Si-Ge STRAINED SUPERLATTICES
- 1 November 1987
- journal article
- Published by EDP Sciences in Le Journal de Physique Colloques
- Vol. 48 (C5) , C5-557
- https://doi.org/10.1051/jphyscol:19875120
Abstract
We present a calculation of both electronic energy levels and intensities of optical transitions in (Si)n-(Ge)n strained superlattices. Strain effects are analyzed by considering cases where either Si or Ge is the substrate determining the lattice parameter. The results are in qualitative agreement with the available experimental informationKeywords
This publication has 0 references indexed in Scilit: