A novel passivation technology of InGaAs surfaces using Si interface control layer and its application to field effect transistor
- 30 September 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (9) , 1679-1683
- https://doi.org/10.1016/0038-1101(95)00046-v
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Performance of a Focused-Ion-Beam Implanter with Tilt-Writing FunctionJapanese Journal of Applied Physics, 1989
- Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfacesJournal of Vacuum Science & Technology B, 1986
- On the electrical properties of compound semiconductor interfaces in metal/insulator/ semiconductor structures and the possible origin of interface statesThin Solid Films, 1983