Traps created at the interface between the nitride and the oxide on the nitride by thermal oxidation

1 April 1983

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 42 (7) , 608-610
https://doi.org/10.1063/1.94018

Abstract

Traps introduced by thermal oxidation of a thin nitride film have been investigated using metal-oxide (top-oxide)-nitride-oxide-semiconductor memory diodes. Memory properties as a function of the initial nitride thickness before thermal oxidation and the top-oxide thickness have revealed that the newly created traps are situated mostly at the top-oxide-nitride interface. The density of the traps is estimated to be (1.6±0.2)×1013/cm2 independent of the initial nitride thickness and the top-oxide thickness.

Keywords

ENERGY LEVELS

This publication has 2 references indexed in Scilit:

Theory of MNOS memory transistor
IEEE Transactions on Electron Devices, 1977
Discharge of MNOS structures
Solid-State Electronics, 1973