Fractal growth of silicon-rich domains during annealing of aluminum thin films deposited on silica
- 1 July 1996
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review E
- Vol. 54 (1) , 599-604
- https://doi.org/10.1103/physreve.54.599
Abstract
We have investigated the reaction of aluminum on silica during annealing of aluminum thin films. We show that the oxidation of the aluminum is uniform, while the silicon migrates onto silicon-rich domains that have a fractal shape. We propose that the reaction is limited by diffusion of silicon in the film. © 1996 The American Physical Society.Keywords
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