Electric Properties of Dislocations in n‐Type Germanium

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Abstract
On the basis of the Read theory the position of dislocation acceptor level in n‐type germanium was determined. It amounts to 0.13 to 0.18 eV below the bottom of the conduction band and is independent of the type of introduced dislocations. The influence of the inhomogeneity of deformations and non‐dislocation defects generated in the course of heating and deformation on the precision of determination of the position of dislocation level was taken into account. — Diffusion of impurities was reduced to minimum by covering the samples with tin. A strong effect on non‐dislocation defects generated in the processes of heating and deformation on mobility and magnetoresistance was detected as well as some changes in mobility for the current flow parallel to the direction of dislocation lines.
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