Photoelectrodeposition of In2Te3 using nonaqueous tri-n-butyl phosphine telluride
- 1 April 1988
- journal article
- research article
- Published by Elsevier in Solar Energy Materials
- Vol. 17 (3) , 185-199
- https://doi.org/10.1016/0165-1633(88)90025-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Performance and Properties of CdTe Electrodeposited from Phosphine Telluride SolutionJournal of the Electrochemical Society, 1987
- Composition and Performance of Thin Film CdSe Electrodeposited from Selenosulfite SolutionJournal of the Electrochemical Society, 1986
- 蒸着によるIn2Te3薄膜の作製とその電気的性質Denki Kagaku oyobi Kogyo Butsuri Kagaku, 1984
- Electrical and optical properties of single crystal In2Te3 and Ga2Te3Solid State Communications, 1984
- The physical properties of CdS thin films electrodeposited from aqueous diethylene glycol solutionsJournal of Applied Physics, 1983
- Growth and properties of well-oriented In2Te3 thin filmsThin Solid Films, 1982
- The influence of the substrate temperature on the preparation of thin film In2Te3Thin Solid Films, 1980
- Phosphine telluridesJournal of Organometallic Chemistry, 1965