Effect of temperature on the base resistance and the noise factor of a bipolar junction transistor

27 July 1972

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 8 (15) , 390-391
https://doi.org/10.1049/el:19720284

Abstract

Noise measurements are used to determine the base resistance of a high-gain diffused silicon bipolar junction transistor over a temperature range 203–443 K. The noise factor F is degraded as the ambient device temperature is increased.

Keywords

DIFFUSION
SI TRANSISTOR
NOISE FACTOR
BIPOLAR TRANSISTORS
NOISE MEASUREMENTS
203 TO 443 DEGREES K
HIGH GAIN
THERMAL EFFECTS
RESISTANCE

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